Si MZ Modulator
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Literature Research
Summary
| Group (Year) | E-O BW | ER @ Baud Rate | Vpp | VπL | IL | Note | Ref |
|---|---|---|---|---|---|---|---|
| zhangjiang (OFC 2025) | 44GHz (-3dB)@-6V bias | 10.1dB @56Gbaud(NRZ) 7.3dB@112Gbaud(NRZ) 1.1dB@112Gbaud(PAM8) | - | 1.1 V*cm | 4.6 dB | 3mm,300 mm high-resistance SOI wafer | Link |
| AMF (OFC 2025) | 90GHz (-3dB) | 2.2dB @200Gbps(PAM4) | - | 2.2 V*cm | 2.1 dB | 2.58mm,modulator structure with the equalizer,DR8 PAM4 transceiver circuit | Link |
| ZJU (Optica 2025) | 110GHz (-1dB) | 2.08dB @140Gbaud | 5V | 4.86 V*cm | 4.3dB | IL may be for biased | Link |
| RTU (OFC 2025) | 67GHz(-6dB)@-2.5V bias | - @256Gbaud(OOK) | 2.7 V | 1.7 V*cm | 2.5 dB | 1.5mm,imec,ISIPP50G process design kit | Link |
| SJTU (OFC 2024) | - @-2V bias | 3.8dB@112Gbps(PAM4) | 3.6V | - | 3.8 dB | on-chip dispersion-compensation-enabled MZMbased on input splitting ratio tuning | Link |
| NICT (ECOC 2024) | 20→60 GHz (with EOFDE) | - | - | 2.24 V·cm | 11.2 dB | EOFDE integration, 3× bandwidth improvement | Link |
| ULaval (JLT 2024) | 45→61 GHz@4V (with MC) | - @120Gbaud 4-ASK | - | ~3 V·cm | ~17 dB | Micro-capacitor structure, 4 mm length | Link |
| YNU (OFC 2024) | 39 GHz (sim) | - @64Gbaud NRZ | 0.87 V | - | - | Photonic crystal slow light, 59 fJ/bit | Link |
| Intel (OFC 2024) | 58.5 GHz (RAMZM） | 3.3 dB @224Gb/s PAM4 | 1.8 Vppd | - | 10.5 dB | Ring-assisted MZM, integrated DFB laser | Link |
| Universite-Laval (ECOC 2023) | 67GHz(-3dB) | - @124Gb/s QPSK | 2.5V | 0.96V*cm | 18 dB | MRA-MZM,bandwidth density of 5.3 Tbps/mm2 | Link |
| NICT (JLT 2023) | >110GHz (-0.4dB @110GHz), est. 200GHz | >30dB @low freq | N/A | ~7.0 V*cm (est.) | 5.4dB (incl. fiber coupling) | Measured up to equipment limit (110GHz) | Link |
| UNESP (SciRep 2023) | 40GHz (6.25V) / 47.5GHz (8V) | N/A | 6.25-8V | N/A | 3.8-4.3dB | ANN+DE optimized design | Link |
| ULaval (JLT 2023) | 63GHz @2V bias, >67GHz @4V bias | >30dB | 2.5-2.8V | ~3.6 V*cm (2-seg) | 8.5dB | Multi-segment SiP modulator | Link) |
| PKU (OFC 2022) | 110GHz | 3.15dB @100Gbps OOK, 2.15dB @112Gbps OOK | N/A | N/A | 6.8dB (incl. 5.4dB from phase shifters) | Ultra-compact 124μm length, no DSP | Link |
| ULaval (OFC 2022) | >67GHz | N/A @120Gbaud 8-ASK | N/A | 3.0 V*cm | 23.5dB (incl. ~15dB fiber coupling) | Net 336.4 Gb/s, Vπ=5V (3-seg) | Link |
| ZJU (ACP 2022) | 67GHz | N/A | N/A | 0.58-2.25 V*cm | N/A | 500μm length, DC Kerr effect | Link |
| CAS (JSSC 2022) | >60GHz | 50Gb/s PAM4 | 4V | 1.75V·cm | 9.8dB | 912mW, 1.39pJ/bit/dB | Link |
Note - All data are expected to be experimental data unless noted explictly. - ER: eye-diagram extinction ratio, single value for NRZ(OOK), 3 values for PAM4. - IL: insertion loss, provide test conditions (average or biased at certain voltage)
Details
zhangjiang (OFC 2025)
- Design: wafer-level fabricated silicon carrier-depletion traveling-wave MZ modulators on a self-developed 300 mm silicon photonic platform
- Electrode: GSG
- Length: 3mm
AMF (OFC 2025)
- Design: the modulator structure with waveguide crossing included for equalizing on SOI platform
- Electrode: GSGSG
- Length: 2.58mm (L(1+2s+c),c=0.03,s=0.75)
ZJU (Optica 2025)
- Design: Combined forward and reverse RF electrodes to achieve EO response peaking and widen effective bandwidth
- Electrode: Single-ended G-S slot line
- Length: 0.9 mm (forward 0.6mm, reverse 0.3mm)
RTU (OFC 2025)
- Design: C-band SiP traveling-wave (TW) MZM
- Electrode: GSGSG
- Length: 1.5 mm
SJTU (OFC 2024)
- Design: composed of a 1X2 MZI and a high-speed MZM modulator
- Electrode: coplanar waveguide traveling wave electrode
- Length: 2.5 mm PN junction
NICT (ECOC 2024)
- Design: Integrated electro-optic frequency domain equalizer, extending bandwidth through polarity-inverted phase modulation segments
- Electrode: GSGSG differential-drive traveling-wave electrode
- Length: 3mm (including EOFDE)
ULaval (JLT 2024)
- Design: Distributed micro-capacitor to reduce PN junction equivalent capacitance and minimize microwave loss
- Electrode: Coplanar stripline, periodic T-shaped extensions
- Length: 4mm
YNU (OFC 2024)
- Design: Photonic crystal slow-light waveguide to enhance modulation efficiency, distributed electrode for high-impedance matching
- Electrode: Distributed high-impedance transmission line + segmented PN junction
- Length: 150μm
Intel (OFC 2024)
- Design: Ring-assisted MZM, push-pull drive for zero-chirp high-linearity modulation
- Electrode: Lumped electrode push-pull drive
- Length: 800μm (MZI arm length)
Universite-Laval (ECOC 2023)
- Design: Each MRA-MZM consists of a balanced Mach-Zehnder in-terferometer (MZI) and two identical MRMs each loaded on one MZI arm.
- Electrode: -
- Length: 600 μm × 100 μm
NICT (JLT 2023)
- Design: Integrated electro-optic frequency domain equalizer (EO equalizer), adding in-phase and anti-phase modulation segments after the basic modulation segment to compensate for high-frequency loss and achieve bandwidth multiplication
- Electrode: Traveling-wave electrode, gold electrode thickness >20μm, CPW structure
- Length: Total electrode length 8.4cm (basic modulation segment 1.9cm + in-phase modulation segment 1.9cm + cross waveguide segment 2.7cm + anti-phase modulation segment 1.9cm)
UNESP (SciRep 2023)
- Design: Deep learning neural network (ANN) and differential evolution (DE) algorithm to optimize silicon MZM design, replacing computationally expensive 3D electromagnetic simulation
- Electrode: PIN rib waveguide based on carrier depletion effect, T-shaped multi-stage slow-wave traveling-wave electrode (CPS technology)
- Length: Phase shifter length 0.5-4mm (optimization range)
ULaval (JLT 2023)
- Design: Multi-segment structure to increase bandwidth by reducing individual segment length, while proposing a simplified differential driving scheme to reduce system complexity
- Electrode: Traveling-wave electrode, 2mm per segment, three equal-length segments, push-pull configuration
- Length: 2mm per segment, total length of 2/4/6mm depending on number of segments used
PKU (OFC 2022)
- Design: Bragg grating slow-light waveguide to enhance light-matter interaction, achieving ultra-high bandwidth in ultra-compact size
- Electrode: Dual-drive structure, GSGSG RF pads
- Length: 124μm (ultra-compact)
ULaval (OFC 2022)
- Design: Three equal-segment structure to increase bandwidth while maintaining low Vπ, with digital delay compensation to solve inter-segment synchronization
- Electrode: Traveling-wave electrode, coplanar stripline, integrated 50Ω termination
- Length: 3×2mm segments
ZJU (ACP 2022)
- Design: Combining slow-light waveguide and slow-wave coplanar waveguide electrode for velocity matching, utilizing DC Kerr effect to improve modulation efficiency
- Structure: Slow-wave coplanar waveguide, periodic floating shield strip structure
- Length: 500μm
CAS (JSSC 2022)
- Design: Lumped-segment MZM (LS-MZM) replacing traditional traveling-wave MZM to improve modulation efficiency and reduce driving voltage requirements
- Electrode: Distributed multi-segment
- Length: 6×500μm phase modulators, zigzag layout