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Si Microring Modulator


Literature Research

Summary

Group (Year) E-O BW ER @ Baud Rate Vpp VπL IL Note Ref
zhangjiang (OFC 2025) 95GHz(-3dB)@0V - @112Gbps(NRZ) 8.32dB@53Gbps(NRZ) 0.9Vpp 0.538V*cm 3dB 12 in.CMOS foundry;Q 1630;26.7pm/V;without driver and optical amplification. Link
XIOPM (OFC 2025) 67GHz(-3dB)@-3V - @256Gbps(PAM4) 8.32dB@53Gbps(NRZ) 1.8Vpp - - 8×256 Gbps Silicon Photonic DWDM;33pm/V Link
FUDAN (OFC 2025) 51GHz(-3dB)@-3V - @112GBaud(PAM4) 0.4Vpp 0.9V*cm 0.5dB 5um Radius,114 aJ/bit energy consumption,lateral junction,26300 Q,13nm FSR Link
FUDAN (OFC 2025) 51GHz(-3dB)@-5V - - - - Ultra-high_Linearity;silicon dual-microring modulator，DWDM，SFDR of 107 dB·Hz²/³ Link
AMD (OFC 2024) 58GHz (-3dB) 4.7dB @64Gbps(NRZ) 1.8Vpp - ＜2.5dB 45CLO,3.8um Radius,3.2THz FSR,200GHz 16λ,vertical junction,4500 Q;44pm/V Link

Note - All data are expected to be experimental data unless noted explictly. - ER: eye-diagram extinction ratio, single value for NRZ(OOK), 3 values for PAM4. - IL: insertion loss, provide test conditions (average or biased at certain voltage)


Details

zhangjiang (OFC 2025)

  • Design: a silicon rib waveguide with height of 220 nm,width of 420 nm, and slab thickness of 70 nm; 200 nm bus-to-microring gap and a racetrack length of 5 μm.
  • Electrode: GS ,junction has 2 doping levels for P and N respectively.integrated tungsten heater.
  • Length: 8um radius

XIOPM (OFC 2025)

  • Design: the modulator features a waveguide width of 380 nm, a coupling gap of 180 nm, and a coupling length of 1 µm.
  • Electrode: GSG ,simple laterally doped PN junction, with two N-type doping concentrations of 1.0E20 cm-3 and 1.0E19 cm-3, as well as two P-type doping concentrations of 7.1×1019 cm-3 and 5.3×1018 cm-3.
  • Length: ≤10um radius

FUDAN (OFC 2025)

  • Design: 260 nm gap,silicon rib waveguide with a height of 220 nm, width of 380 nm, and a slab thickness of 150 nm;1e17 cm−3 for p-type region and 3.5e17 cm−3 for the n-type region.
  • Electrode: GSG ,integrating a tungsten heater on top of the waveguide
  • Length: 5um radius

FUDAN (OFC 2025)

  • Design: gaps 260nm;waveguide width 380 nm and height 220 nm,rib waveguide slab thickness 70 nm,PIN dopant i width 250 nm;highly doped concentration are 3E20 cm-3 and1E20 cm-3 for p++ and n++ in the fabrication,respectively.
  • Electrode: GSG ,
  • Length: 10um radius;two identical microring resonators

AMD (OFC 2024)

  • Design: widen the ring waveguide,carrier-depletion vertical junction design,10% drop port,which terminates with a photodetector for tuning and locking the ring resonance
  • Electrode: GSG ,metal traces are designed using two loop square spiral geometries between the inner (N Junction) and the high-speed driving signal
  • Length: 3.8um radius